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In-situ fabrication of on-chip 1T’-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing
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In-situ fabrication of on-chip 1T’-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing
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In-situ fabrication of on-chip 1T’-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing
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Journal Article
In-situ fabrication of on-chip 1T’-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing
2024
Overview
High-sensitivity room-temperature multi-dimensional infrared (IR) detection is crucial for military and civilian purposes. Recently, the gapless electronic structures and unique optoelectrical properties have made the two-dimensional (2D) topological semimetals promising candidates for the realization of multifunctional optoelectronic devices. Here, we demonstrated the
in-situ
construction of high-performance 1T’-MoTe
2
/Ge Schottky junction device by inserting an ultrathin AlO
x
passivation layer. The good detection performance with an ultra-broadband detection wavelength range of up to 10.6 micron, an ultrafast response time of ~ 160 ns, and a large specific detectivity of over 10
9
Jones in mid-infrared (MIR) range surpasses that of most 2D materials-based IR sensors, approaching the performance of commercial IR photodiodes. The on-chip integrated device arrays with 64 functional detectors feature high-resolution imaging capability at room temperature. All these outstanding detection features have enabled the demonstration of position-sensitive detection applications. It demonstrates an exceptional position sensitivity of 14.9 mV/mm, an outstanding nonlinearity of 6.44%, and commendable trajectory tracking and optoelectronic demodulation capabilities. This study not only offers a promising route towards room-temperature MIR optoelectronic applications, but also demonstrates a great potential for application in optical sensing systems.
Publisher
Tsinghua University Press
