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Grain boundary motions of low temperature and low pressure copper to copper direct bonding by electroplating ultra-fine-grain (UFG) Cu
by
Huang, Wei-Cheih
, Huang, Yu-Chen
, Hsu, Chih-En
, Lee, Yun-Fong
, Lin, Chia-Hua
, Lo, Mei-Hsin
, Cheng, Ting-Yi
, Lin, Chin-Li
, Pan, Shao-An
, Hsieh, Hang-Chen
, Chen, Po-Yu
, Yu, Zhong-Yen
, Liu, Cheng-Yi
, Yang, Liu-Hsin-Chen
, Chiu, Chih-Wen
, Chang, Jui-Sheng
, Chiu, Chin-Yen
, Lin, Kai-Chi
, Su, Yi-Cheng
in
639/166
/ 639/301
/ 639/638
/ 639/766
/ Boundaries
/ Computer centers
/ Copper
/ Electroplating
/ Grain boundaries
/ Grain growth
/ Grain size
/ Growth models
/ Humanities and Social Sciences
/ Interfaces
/ Low temperature
/ multidisciplinary
/ Plating
/ Science
/ Science (multidisciplinary)
/ Semiconductors
/ Sulfuric acid
/ Temperature
2025
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Grain boundary motions of low temperature and low pressure copper to copper direct bonding by electroplating ultra-fine-grain (UFG) Cu
by
Huang, Wei-Cheih
, Huang, Yu-Chen
, Hsu, Chih-En
, Lee, Yun-Fong
, Lin, Chia-Hua
, Lo, Mei-Hsin
, Cheng, Ting-Yi
, Lin, Chin-Li
, Pan, Shao-An
, Hsieh, Hang-Chen
, Chen, Po-Yu
, Yu, Zhong-Yen
, Liu, Cheng-Yi
, Yang, Liu-Hsin-Chen
, Chiu, Chih-Wen
, Chang, Jui-Sheng
, Chiu, Chin-Yen
, Lin, Kai-Chi
, Su, Yi-Cheng
in
639/166
/ 639/301
/ 639/638
/ 639/766
/ Boundaries
/ Computer centers
/ Copper
/ Electroplating
/ Grain boundaries
/ Grain growth
/ Grain size
/ Growth models
/ Humanities and Social Sciences
/ Interfaces
/ Low temperature
/ multidisciplinary
/ Plating
/ Science
/ Science (multidisciplinary)
/ Semiconductors
/ Sulfuric acid
/ Temperature
2025
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Grain boundary motions of low temperature and low pressure copper to copper direct bonding by electroplating ultra-fine-grain (UFG) Cu
by
Huang, Wei-Cheih
, Huang, Yu-Chen
, Hsu, Chih-En
, Lee, Yun-Fong
, Lin, Chia-Hua
, Lo, Mei-Hsin
, Cheng, Ting-Yi
, Lin, Chin-Li
, Pan, Shao-An
, Hsieh, Hang-Chen
, Chen, Po-Yu
, Yu, Zhong-Yen
, Liu, Cheng-Yi
, Yang, Liu-Hsin-Chen
, Chiu, Chih-Wen
, Chang, Jui-Sheng
, Chiu, Chin-Yen
, Lin, Kai-Chi
, Su, Yi-Cheng
in
639/166
/ 639/301
/ 639/638
/ 639/766
/ Boundaries
/ Computer centers
/ Copper
/ Electroplating
/ Grain boundaries
/ Grain growth
/ Grain size
/ Growth models
/ Humanities and Social Sciences
/ Interfaces
/ Low temperature
/ multidisciplinary
/ Plating
/ Science
/ Science (multidisciplinary)
/ Semiconductors
/ Sulfuric acid
/ Temperature
2025
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Grain boundary motions of low temperature and low pressure copper to copper direct bonding by electroplating ultra-fine-grain (UFG) Cu
Journal Article
Grain boundary motions of low temperature and low pressure copper to copper direct bonding by electroplating ultra-fine-grain (UFG) Cu
2025
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Overview
Cu–Cu direct bonding using electroplated ultrafine-grain Cu (107.24 nm) was studied in air at 110–150 °C. Unstable grain boundaries enabled ultrafast grain growth across the bonding interface, analyzed via coincidence site lattice (CSL) boundaries using EBSD. Above 125 °C, the Σ3 boundary length exceeded 40%, while below 120 °C it rapidly declined, transforming into Σ27a, indicating a critical transition dominated by the {115} plane. A temperature–time-dependent grain growth model was developed, incorporating CSL effects. Simulations showed grain evolution and timing of CSL boundary formation, with transition times from 316 to 190 s as temperature increased.
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