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Integrated quantum optical phase sensor in thin film lithium niobate
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Integrated quantum optical phase sensor in thin film lithium niobate
Integrated quantum optical phase sensor in thin film lithium niobate
Journal Article

Integrated quantum optical phase sensor in thin film lithium niobate

2023
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Overview
The quantum noise of light, attributed to the random arrival time of photons from a coherent light source, fundamentally limits optical phase sensors. An engineered source of squeezed states suppresses this noise and allows phase detection sensitivity beyond the quantum noise limit (QNL). We need ways to use quantum light within deployable quantum sensors. Here we present a photonic integrated circuit in thin-film lithium niobate that meets these requirements. We use the second-order nonlinearity to produce a squeezed state at the same frequency as the pump light and realize circuit control and sensing with electro-optics. Using 26.2 milliwatts of optical power, we measure (2.7 ± 0.2)% squeezing and apply it to increase the signal-to-noise ratio of phase measurement. We anticipate that photonic systems like this, which operate with low power and integrate all of the needed functionality on a single die, will open new opportunities for quantum optical sensing. Squeezed light allows for quantum-enhanced, sub-shot-noise sensing, but its generation and use on a chip has so far remained elusive. Here, the authors fill this gap by demonstrating a thin-film lithium-niobate-based integrated quantum optical sensor, which beats shot-noise-limited SNR by ~ 4%.